product s pecification www.jmnic.com jmnic silicon npn power transistor 2sc2334 description ? low collector saturation voltage ? fast switching speed ? complement to type 2sa1010 applications ? developed for high-voltage high-speed switching, and is ideal for use as a driver in devices such as switching reg- lators, dc/dc converters, and high frequency power am- plifiers. absolute maximum ratings(t a =25 ?? ) symbol parameter value unit v cbo collector-base voltage 150 v v ceo collector-emitter voltage 100 v v ebo emitter-base voltage 7.0 v i c collector current-continuous 7.0 a i cm collector current-peak 15 a i b base current-continuous 3.5 a collector power dissipation @ t a =25 ?? 1.5 p c total power dissipation @ t c =25 ?? 40 w t j junction temperature 150 ?? t stg storage temperature range -55~150 ??
product s pecification www.jmnic.com jmnic silicon npn power transistor 2sc2334 electrical characteristics t c =25 ?? unless otherwise specified symbol parameter conditions min max unit v ceo(sus) collector-emitter sustaining voltage i c = 5.0a ; i b = 0.5a, l=1mh 100 v v cex(sus)-1 collector-emitter sustaining voltage i c = 5.0a ; i b1 =-i b2 = 0.5a, v be( off ) =5.0v, l=180 | h,clamped 100 v v cex(sus)-2 collector-emitter sustaining voltage i c = 10a ; i b1 = 1.0a; i b2 = -0.5a, v be( off ) = -5.0v, l= 180 | h,clamped 100 v v ce (sat) collector-emitter saturation voltage i c = 5.0a; i b = 0.5a 0.6 v v be (sat) base-emitter saturation voltage i c = 5.0a; i b = 0.5a 1.5 v i cbo collector cutoff current v cb = 100v ; i e = 0 10 | a i cer collector cutoff current v ce = 100v ; r be = 51 |? ,t a =125 ?? 1.0 ma i cex collector cutoff current v ce = 100v; v be(off) = -1.5v v ce = 100v; v be(off) = -1.5v,t a =125 ?? 10 1.0 | a ma i ebo emitter cutoff current v eb = 5v; i c = 0 10 | a h fe-1 dc current gain i c = 0.5a ; v ce = 5v 40 200 h fe-2 dc current gain i c = 3.0a ; v ce = 5v 70 140 h fe-3 dc current gain i c = 5.0a ; v ce = 5v 20 switching times t on turn-on time 0.5 | s t stg storage time 1.5 | s t f fall time i c = 5.0a ,r l = 10 |? , i b1 = -i b2 = 0.5a,v cc ?? 50v 0.5 | s
product specification www.jmnic.com jm nic silicon npn power transistors 2sc2334 package outline fig.2 outline dimensions(unindicate d tolerance:?0.10 mm)
product specification www.jmnic.com jm nic silicon npn power transistors 2sc2334
|
